The Growth of the Oxide Layer on Silicon Spheres and Its Influence on Their Mass Stability
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چکیده
The first results of gravimetric measurements of the growth of the oxide layer on single-crystal silicon spheres are presented and compared with a theoretical model and with measurements of the surface layer based on X-ray and ellipsometric methods. From the results, conclusions can be drawn about the quantitative influence of the growth of the oxide layer on the mass stability of silicon spheres.
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تاریخ انتشار 2013